AlGaN/GaN heterojunction bipolar transistor
نویسندگان
چکیده
منابع مشابه
GaAs Heterojunction Bipolar Transistor Emitter Design
We demonstrate that GaAs-based HBTs with very low base currents at both low and high injection levels can be achieved using either Al0.35Ga0.65As or InGaP in the emitter with the proper optimization of structure and growth. We observe an order of magnitude reduction in space charge recombination current as the Al composition, and hence the energy-gap, of the emitter increases from 25% (1.77 eV)...
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ACKNOWLEDGEMENTS I am deeply indebted to Dr. John D. Cressler for his patience, guidance, and support throughout my master's program. My inspiration came from his passion for research and his confidence in my abilities. Working under his leadership in such an exciting field was both educationally and professionally enriching. I would also like to thank the other members of my thesis advisory co...
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ژورنال
عنوان ژورنال: IEEE Electron Device Letters
سال: 1999
ISSN: 0741-3106,1558-0563
DOI: 10.1109/55.767097